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CPH5617 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications
Ordering number : EN7370C
CPH5617
N-Channel Power MOSFET
30V, 150mA, 3.7Ω, Dual CPH5
http://onsemi.com
Features
• Low ON-resistance
• Ultrahigh-speed switching
• 1.5V drive
• Composite type with 2 MOSFETs contained in the one package, improving the mounting efficiency greatly
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
Unit
30
V
±10
V
150 mA
600 mA
0.25
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7017A-004
2.9
5 43
1
0.95
2
0.4
0.15 CPH5617-TL-E
Product & Package Information
• Package
: CPH5
• JEITA, JEDEC
: SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
0.05
1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
CPH5
TL
Electrical Connection
5
4
3
12
Semiconductor Components Industries, LLC, 2013
August, 2013
82113 TKIM TC-00002980/71112 TKIM/N1109PE TKIM/90503 TSIM TA-3722 No.7370-1/6