CPH3461 Datasheet, PDF (1/5 Pages) ON Semiconductor – Single N-Channel Power MOSFET

CPH3461
Power MOSFET
250V, 6.5Ω, 350mA, Single N-Channel
www.onsemi.com
Features
 On-Resistance RDS(on)1=5Ω (typ)
 2.5V Drive
 Pb-Free, Halogen Free and RoHS Compliance
 ESD Diode - Protected Gate
 Low Ciss and High Speed Switching
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain to Gate Voltage
Gate to Drain Voltage
VDSS
VGSS
VDGS
VGDS
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Junction Temperature
ID
IDP
PW10s, duty cycle1%
PD
When mounted on ceramic substrate (900mm²  0.8mm)
Tj
Storage Temperature
Tstg
Value
Unit
250
V
10
V
250
V
10
V
350
mA
1.4
A
1.0
W
150
C
55 to +150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (900mm²ï‚´0.8mm)
Symbol
R_JA
Value
125
Unit
C/W
Electrical Characteristics at Ta  25C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
Conditions
ID=1mA, VGS=0V
VDS=250V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=170mA
ID=170mA, VGS=4.5V
ID=170mA, VGS=2.5V
min
250
0.4
Value
Unit
typ
max
V
1 A
10 A
1.3 V
1
S
5
6.5 
5.1
7.2 
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
February 2015 - Rev. 2
Publication Order Number :
CPH3461/D