CPH3459 Datasheet, PDF (1/5 Pages) ON Semiconductor – Single N-Channel Power MOSFET

Ordering number : ENA2301A
CPH3459
Power MOSFET
200V, 3.7Ω, 0.5A, Single N-Channel
http://onsemi.com
Features
 On-resistance RDS(on)1=2.8Ω (typ)
 4V drive
 Halogen free compliance
 Input Capacitance Ciss=90pF (typ)
 Protection Diode in
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Junction Temperature
VDSS
VGSS
ID
IDP
PD
Tj
PW10s, duty cycle1%
When mounted on ceramic substrate (900mm²ï‚´0.8mm)
Storage Temperature
Tstg
Value
Unit
200
V
20
V
0.5
A
2
A
1.0
W
150
C
55 to +150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (900mm²ï‚´0.8mm)
Symbol
R_JA
Value
125
Unit
C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Electrical Characteristics at Ta  25C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
Conditions
ID=1mA, VGS=0V
VDS=200V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=0.25A
ID=0.25A, VGS=10V
ID=0.25A, VGS=4V
min
200
1.2
Value
Unit
typ
max
V
1 A
10 A
2.6 V
0.8
S
2.8
3.7 
2.9
4.1 
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
August, 2014
80714HK TC-00003142/52214TKIM No.A2301-1/5