CPH3362 Datasheet, PDF (1/5 Pages) ON Semiconductor – Single P-Channel Power MOSFET

Ordering number : ENA2321A
CPH3362
Power MOSFET
100V, 1.7Ω, 0.7A, Single P-Channel
http://onsemi.com
Features
 On-resistance RDS(on)1=1.3Ω (typ)
 4V drive
 Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
VDSS
VGSS
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
ID
IDP
PW10s, duty cycle1%
PD
When mounted on ceramic substrate (900mm²ï‚´0.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Value
Unit
100
V
20
V
0.7
A
2.8
A
1
W
150
C
55 to +150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (900mm²ï‚´0.8mm)
Symbol
R_JA
Value
125
Unit
C/W
Electrical Characteristics at Ta  25C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
Conditions
ID=1mA, VGS=0V
VDS=-100V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=0.3A
ID=0.7A, VGS=10V
ID=0.3A, VGS=4.5V
ID=0.3A, VGS=4V
VDS=20V, f=1MHz
min
100
1.2
Value
Unit
typ
max
V
-1 A
10 A
2.6 V
1.0
S
1.3
1.7 
1.4
1.96 
1.45
2.1 
142
pF
12
pF
7.3
pF
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
July, 2014
72314HK TC-00003137/40914TKIM PE No.A2321-1/5