CPH3355 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

CPH3355
Power MOSFET
–30V, 156mΩ, –2.5A, Single P-Channel
www.onsemi.com
Features
• On-resistance RDS(on)1=120mΩ (typ)
• 4V drive
• Halogen free compliance
Electrical Connection
P-Channel
3
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Value
Unit
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
VDSS
VGSS
ID
–30
V
±20
V
–2.5
A
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
IDP
–10
A
Power Dissipation
When mounted on ceramic substrate
PD
(900mm²Ã—0.8mm)
1.0
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm²Ã—0.8mm)
Symbol
R_θJA
Value
Unit
125
°C/W
1
2
Packing Type:TL
Marking
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
December 2014 - Rev. 3
Publication Order Number :
CPH3355/D