CPH3350 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA0151B
CPH3350
P-Channel Power MOSFET
–20V, –3A, _{83mΩ, Single CPH3}
http://onsemi.com
Features
• _{Ultrahigh-speed switching}
• _{1.8V drive}
• _{Halogen free compliance}
• _{Protection diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Ratings
Unit
--20
V
±10
V
--3
A
--12
A
1.0
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7015A-004
2.9
3
Product & Package Information
• Package
: CPH3
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
CPH3350-TL-H
0.15 ^{CPH3350-TL-W Packing Type: TL}
Marking
1
0.95
2
0.4
0.05
1 : Gate
2 : Source
3 : Drain
CPH3
TL
Electrical Connection
3
1
2
Semiconductor Components Industries, LLC, 2013
October, 2013
O0913 TKIM TC-00002895/60612 TKIM/D1411PE TKIM TC-00002683 No. A0151-1/6