C122F1 Datasheet, PDF (1/4 Pages) ON Semiconductor – Silicon Controlled Rectifiers Reverse Blocking Thyristors

C122F1, C122B1
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half−wave silicon gate−controlled, solid−state devices are needed.
Features
• Glass Passivated Junctions and Center Gate Fire for Greater
Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 200 Volts
• Pb−Free Packages are Available*
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage
V_DRM,
V
(Note 1) (T_J = 25 to 100°C, Sine Wave, V_RRM
50 to 60 Hz; Gate Open)
C122F1
50
C122B1
200
On-State RMS Current
I_T(RMS)
8.0
A
(180° Conduction Angles; T_C = 75°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
T_C = 75°C)
Circuit Fusing Considerations (t = 8.3 ms)
I_TSM
I²t
90
A
34
A²s
Forward Peak Gate Power
(Pulse Width = 10 ms, T_C = 70°C)
P_GM
5.0
W
Forward Average Gate Power
(t = 8.3 ms, T_C = 70°C)
P_G(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width = 10 ms, T_C = 70°C)
I_GM
2.0
A
Operating Junction Temperature Range
T_J
−40 to +125 °C
Storage Temperature Range
T_stg −40 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
August, 2005 − Rev. 3
http://onsemi.com
SCRs
8 AMPERES RMS
50 thru 200 VOLTS
G
A
K
MARKING
DIAGRAM
4
1
2
3
TO−220AB
CASE 221A
STYLE 3
A YW
C122F1G
AKA
A
Y
W
C122F1
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
Device
C122F1
C122F1G
C122B1
Package
TO220AB
TO220AB
(Pb−Free)
TO220AB
Shipping
500 Units / Box
500 Units / Box
500 Units / Box
C122B1G
TO220AB
(Pb−Free)
500 Units / Box
Publication Order Number:
C122F1/D