BUX85G_15 Datasheet, PDF (1/5 Pages) ON Semiconductor – Switch‐mode NPN Silicon Power Transistors

BUX85G
Switch‐mode NPN Silicon
Power Transistors
The BUX85G is designed for high voltage, high speed power
switching applications like converters, inverters, switching regulators,
motor control systems.
Features
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak (Note 1)
Base Current
− Continuous
Base Current
− Peak (Note 1)
Reverse Base Current − Peak
Total Device Dissipation @ T_C = 25_C
Derate above 25°C
Symbol
V_CEO(sus)
V_CES
V_EBO
I_C
I_CM
I_B
I_BM
I_BM
P_D
Value
450
1000
5
2
3.0
0.75
1.0
1
50
0.4
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Adc
Adc
W
W/_C
Operating and Storage Junction
Temperature Range
T_J, T_stg −65 to +150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Symbol
R_qJC
R_qJA
T_L
Max
Unit
2.5
_C/W
62.5
_C/W
275
_C
www.onsemi.com
2.0 AMPERES
POWER TRANSISTOR
NPN SILICON
450 VOLTS, 50 WATTS
COLLECTOR
2,4
1
BASE
3
EMITTER
4
TO−220
CASE 221A
STYLE 1
1
23
MARKING DIAGRAM
BUX85G
AY WW
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
1
March, 2015 − Rev. 18
BUX85
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BUX85G
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
BUX85/D