BUV27_14 Datasheet, PDF (1/5 Pages) ON Semiconductor – NPN Silicon Power Transistor

BUV27
NPN Silicon Power
Transistor
This device is designed for use in switching regulators and motor
control.
Features
• Low Collection Emitter Saturation Voltage
• Fast Switching Speed
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Sustaining Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak (Note 1)
Base Current
Total Device Dissipation (T_C = 25°C)
Derate above 25°C
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
P_D
120
Vdc
240
Vdc
7.0
Vdc
12
Adc
20
Adc
4.0
Adc
70
W
0.56
W/°C
Operating and Storage Temperature
T_J, T_stg − 65 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case R_qJC
Junction−to−Ambient R_qJA
1.78
°C/W
62.5
www.onsemi.com
POWER TRANSISTOR
12 AMPERES
120 VOLTS
70 WATTS
SCHEMATIC
COLLECTOR
2,4
1
BASE
3
EMITTER
MARKING
DIAGRAM
4
1
2
3
TO−220
CASE 221A
STYLE 1
BUV27G
AYWW
1
BUV27 = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BUV27G
TO−220
(Pb−Free)
50 per Rail
*For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 5
Publication Order Number:
BUV27/D