BUV27 Datasheet, PDF (1/4 Pages) STMicroelectronics – MEDIUM POWER NPN SILICON TRANSISTOR

BUV27
NPN Silicon Power
Transistor
This device is designed for use in switching regulators and motor
control.
Features
• Low Collection Emitter Saturation Voltage
• Fast Switching Speed
• Pb−Free Package is Available*
http://onsemi.com
POWER TRANSISTOR
12 AMPERES
120 VOLTS
70 WATTS
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Sustaining Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current
− Continuous
− Peak (Note 1)
Base Current
Total Device Dissipation (T_C = 25°C)
Derate above 25°C
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
P_D
120
Vdc
240
Vdc
7.0
Vdc
12
Adc
20
4.0
Adc
70
W
0.56
W/°C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
T_J, T_stg − 65 to 150 °C
Rating
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case R_qJC
Junction−to−Ambient R_qJA
1.78
°C/W
62.5
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
1
2
3
MARKING
DIAGRAM
4
TO−220AB
CASE 221A
STYLE 1
BUV27G
AYWW
BUV27 = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BUV27
BUV27G
TO−220AB
TO−220AB
(Pb−Free)
50 per Rail
50 per Rail
*For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
August, 2005 − Rev. 1
Publication Order Number:
BUV27/D