BUV26_14 Datasheet, PDF (1/4 Pages) ON Semiconductor – Switch-mode Series NPN Silicon Power Transistor

BUV26
Switch‐mode Series NPN
Silicon Power Transistor
Designed for high−speed applications.
Features
• Switch-mode Power Supplies
• High Frequency Converters
• Relay Drivers
• Driver
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V_CEO(sus)
90
Vdc
Collector−Base Voltage
V_CBO
180
Vdc
Emitter−Base Voltage
V_EBO
7.0
Vdc
Collector Current − Continuous
I_C
20
Adc
Collector Current − Peak (pw 10 ms)
I_CM
30
Adc
Base Current − Continuous
I_B
4.0
Adc
Base Current − Peak
I_BM
6.0
Adc
Total Power Dissipation @ T_C = 25°C
P_D
Total Power Dissipation @ T_C = 60°C
P_D
85
W
65
W
Operating and Storage Junction
Temperature Range
T_J, T_stg −  65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
R_qJC
1.76
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 6
www.onsemi.com
12 AMPERES
NPN SILICON
POWER TRANSISTORS
90 VOLTS, 85 WATTS
SCHEMATIC
COLLECTOR
2,4
1
BASE
3
EMITTER
MARKING
DIAGRAM
4
TO−220
CASE 221A
STYLE 1
BUV26G
AYWW
1
2
1
3
BUV26 = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BUV26G
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
BUV26/D