BUV26_11 Datasheet, PDF (1/3 Pages) ON Semiconductor – Switchmode Series NPN Silicon Power Transistor

BUV26
Switchmode Series NPN
Silicon Power Transistor
Designed for high−speed applications.
Features
• Switchmode Power Supplies
• High Frequency Converters
• Relay Drivers
• Driver
• Pb−Free Package is Available*
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V_CEO(sus)
90
Vdc
Collector−Base Voltage
V_CBO
180
Vdc
Emitter−Base Voltage
V_EBO
7.0
Vdc
Collector Current − Continuous
I_C
Collector Current − Peak (pw 10 ms)
I_CM
20
Adc
30
Apk
Base Current − Continuous
I_B
4.0
Adc
I_BM
6.0
Adc
Total Power Dissipation @ T_C = 25°C
P_D
Total Power Dissipation @ T_C = 60°C
P_D
85
W
65
W
Operating and Storage Junction
Temperature Range
T_J, T_stg −  65 to +175 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
R_qJC
1.76
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
12 AMPERES
NPN SILICON
POWER TRANSISTORS
90 VOLTS, 85 WATTS
MARKING
DIAGRAM
TO−220
CASE 221A
STYLE 1
BUV26G
AYWW
1
2
3
BUV26 = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BUV26
BUV26G
TO−220
TO−220
(Pb−Free)
50 Units/Rail
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
1
July, 2011 − Rev. 2
Publication Order Number:
BUV26/D