BUV26 Datasheet, PDF (1/3 Pages) STMicroelectronics – MEDIUM POWER NPN SILICON TRANSISTOR

BUV26
Switchmode Series NPN
Silicon Power Transistor
Designed for high−speed applications.
Features
• Switchmode Power Supplies
• High Frequency Converters
• Relay Drivers
• Driver
• Pb−Free Package is Available*
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak (pw 10 ms)
Base Current − Continuous
Total Power Dissipation @ T_C = 25°C
Total Power Dissipation @ T_C = 60°C
Operating and Storage Junction
Temperature Range
V_CEO(sus)
90
Vdc
V_CBO
180
Vdc
V_EBO
7.0
Vdc
I_C
20
Adc
I_CM
30
Apk
I_B
4.0
Adc
I_BM
6.0
Adc
P_D
85
W
P_D
65
W
T_J, T_stg − 65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
R_qJC
1.76
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
12 AMPERES
NPN SILICON
POWER TRANSISTORS
90 VOLTS, 85 WATTS
MARKING
DIAGRAM
TO−220
CASE 221A
STYLE 1
BUV26G
AYWW
1
2
3
BUV26 = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BUV26
BUV26G
TO−220
TO−220
(Pb−Free)
50 Units/Rail
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
August, 2005 − Rev. 1
Publication Order Number:
BUV26/D