BUV21_13 Datasheet, PDF (1/4 Pages) ON Semiconductor – SWITCHMODE Series NPN Silicon Power Transistor

BUV21
SWITCHMODEt Series
NPN Silicon Power
Transistor
This device is designed for high speed, high current, high power
applications.
Features
• High DC Current Gain:
h_FE min = 20 at I_C = 12 A
• Low V_CE(sat), V_CE(sat)
max = 0.6 V at I_C = 8 A
• Very Fast Switching Times:
TF max = 0.4 ms at I_C = 25 A
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol
Value
Collector−Emitter Voltage
V_CEO(SUS)
200
Collector−Base Voltage
V_CBO
250
Emitter−Base Voltage
V_EBO
7
Collector−Emitter Voltage (V_BE = −1.5 V)
V_CEX
250
Collector−Emitter Voltage (R_BE = 100 W)
V_CER
240
Collector−Current − Continuous
I_C
40
− Peak (PW v 10 ms)
I_CM
50
Base−Current Continuous
I_B
8
Total Device Dissipation @ T_C = 25_C
P_D
250
Operating and Storage Junction
Temperature Range
T_J, T_stg −65 to 200
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Apk
Adc
W
_C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
q_JC
0.7
_C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
40 AMPERES
NPN SILICON POWER
METAL TRANSISTOR
200 VOLTS − 250 WATTS
BASE
1
NPN
COLLECTOR
CASE
EMITTER 2
MARKING
DIAGRAM
1
2
TO−204AE (TO−3)
CASE 197A
STYLE 1
BUV21G
AYWW
MEX
BUV21 = Device Code
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW = Work Week
MEX = Country of Origin
ORDERING INFORMATION
Device
Package
Shipping
BUV21G
TO−204
(Pb−Free)
100 Units / Tray
© Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 11
Publication Order Number:
BUV21/D