BUV21_06 Datasheet, PDF (1/4 Pages) ON Semiconductor – SWITCHMODE Series NPN Silicon Power Transistor

BUV21
SWITCHMODEt Series
NPN Silicon Power
Transistor
This device is designed for high speed, high current, high power
applications.
Features
• High DC Current Gain:
h_FE min = 20 at I_C = 12 A
• Low V_CE(sat), V_CE(sat)
max = 0.6 V at I_C = 8 A
• Very Fast Switching Times:
TF max = 0.4 ms at I_C = 25 A
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V_CEO(SUS)
200
Vdc
Collector−Base Voltage
V_CBO
250
Vdc
Emitter−Base Voltage
V_EBO
7
Vdc
Collector−Emitter Voltage (V_BE = −1.5 V)
V_CEX
250
Vdc
Collector−Emitter Voltage (R_BE = 100 W)
V_CER
240
Vdc
Collector−Current − Continuous
I_C
− Peak (PW v 10 ms)
I_CM
40
Adc
50
Apk
Base−Current Continuous
I_B
8
Adc
Total Device Dissipation @ T_C = 25_C
Operating and Storage Junction
Temperature Range
P_D
250
W
T_J, T_stg −65 to 200 _C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
q_JC
0.7
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 10
http://onsemi.com
40 AMPERES
NPN SILICON POWER
METAL TRANSISTOR
200 VOLTS − 250 WATTS
TO−204AE (TO−3)
CASE 197A
MARKING DIAGRAM
BUV21G
AYWW
MEX
BUV21 = Device Code
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW = Work Week
MEX = Country of Origin
ORDERING INFORMATION
Device
Package
Shipping
BUV21
TO−204
100 Units / Tray
BUV21G
TO−204
(Pb−Free)
100 Units / Tray
Publication Order Number:
BUV21/D