BUV20 Datasheet, PDF (1/4 Pages) Motorola, Inc – 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS

ON Semiconductort
SWITCHMODEt Series
NPN Silicon Power Transistor
. . . designed for high speed, high current, high power applications.
• High DC current gain:
h_FE min = 20 at I_C = 25 A
= 10 at I_C = 50 A
• Low V_CE(sat):
V_CE(sat) max. = 0.6 V at I_C = 25 A
= 0.9 V at I_C = 50 A
• Very fast switching times:
T_F = 0.25 µs at I_C = 50 A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emititer Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage (VBE =}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ –1.5 V)
Symbol
V_CEO(sus)
V_CBO
V_EBO
V_CEX
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter voltage (RBE =
100 Ω)
V_CER
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Current — Continuous}
I_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{— Peak(PWv}
I_CM
10 ms)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base–Current continuous}
I_B
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC =}
P_D
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
Temperature Range
T_J, T_stg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to}
θ_JC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Case
BUV20
BUV60
125
160
260
7
160
260
150
260
50
60
10
250
–65 to 200
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Apk
Adc
Watts
_C
BUV20
BUV60
0.7
Unit
_C/W
1.0
0.8
0.6
0.4
0.2
BUV20
BUV60
50 AMPERES
NPN SILICON
POWER
METAL TRANSISTOR
125 VOLTS
250 WATTS
CASE 197A–05
TO–204AE
(TO–3)
0
© Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 10
40
80
120
160
200
T_C, TEMPERATURE (°C)
Figure 1. Power Derating
1
Publication Order Number:
BUV20/D