BUV11 Datasheet, PDF (1/4 Pages) Motorola, Inc – 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
SWITCHMODE Series
NPN Silicon Power Transistor
. . . designed for high current, high speed, high power applications.
• High DC current gain; hFE min. = 20 at IC = 6 A
• Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 6 A
• Very fast switching times:
TF max. = 0.8 µs at IC = 12 A
Order this document
by BUV11/D
BUV11
20 AMPERES
NPN SILICON
POWER
METAL TRANSISTOR
200 VOLTS
150 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Collector–Emitter Voltage (VBE = –1.5 V)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Collector–Emitter Voltage (RBE = 100 Ω)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _v ^{Collector–Current— Continuous}
— Peak (pw 10 ms)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base–Current continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction Temperature Range}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
Symbol
VCEO(sus)
VCBO
VEBO
VCEX
VCER
IC
ICM
IB
PD
TJ, Tstg
Symbol
θ_JC
CASE 1–07
TO–204AA
(TO–3)
Value
200
250
7
250
240
20
25
4
150
– 65 to 200
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Apk
Adc
Watts
_C
Max
Unit
1.17
_C/W
1.0
0.8
0.6
0.4
0.2
0
SWITCHMODE is a trademark of Motorola, Inc.
REV 7
40
80
120
160
200
TC, TEMPERATURE (°C)
Figure 1. Power Derating
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la95_{r Power Transistor Device Data}
1