BUT11AF Datasheet, PDF (1/8 Pages) Motorola, Inc – POWER TRANSISTOR 5.0 AMPERES 450 VOLTS 40 WATTS

ON Semiconductort
FULL PAKt
High Voltage NPN Power Transistor
For Isolated Package Applications
The BUT11AF was designed for use in line operated switching
power supplies in a wide range of end use applications. This device
combines the latest state of the art bipolar fabrication techniques to
provide excellent switching, high voltage capability and low
saturation voltage.
• 1000 Volt V_CES Rating
• Low Base Drive Requirements
• Isolated Overmold Package
• Improved System Efficiency
• No Isolating Washers Required
• Reduced System Cost
• High Isolation Voltage Capability (4500 V_RMS)
BUT11AF
POWER TRANSISTOR
5.0 AMPERES
450 VOLTS
40 WATTS
CASE 221D–02
TO–220 TYPE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
RMS Isolation Voltage (For 1 sec,
T_A = 25°C, Rel. Humidity < 30%)
Collector Current — Continuous
Collector Current — Pulsed (1)
Base Current — Continuous
Base Current — Pulsed (1)
Total Power Dissipation @ T_C = 25°C*
Derated above 25°C
Per Figure 7
Per Figure 8
Per Figure 9
V_CEO(sus)
V_CES
V_EBO
V_ISOL1
V_ISOL2
V_ISOL3
I_C
I_CM
I_B
I_BM
P_D
450
1000
9.0
4500
3500
2500
5.0
10
2.0
4.0
40
0.32
Vdc
Vdc
Vdc
V
Adc
Adc
Watts
W/°C
Operating and Storage Temperature Range
T_J, T_stg
– 65 to +150
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case*
R_θJC
3.125
°C/W
Maximum Lead Temperature for soldering purposes
1/8″ from case for 5 sec.
T_L
260
°C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
*Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die),
the device mounted on a heatsink, thermal grease applied, and a mounting torque of 6 to 8 in ^. lbs.
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 4
Publication Order Number:
BUT11AF/D