BUS50 Datasheet, PDF (1/4 Pages) Motorola, Inc – 70 AMPERES NPN SILICON POWER TRANSISTOR 125 VOLTS (BVCEO) 350 WATTS 200 V (BVCES)

ON Semiconductort
SWITCHMODEt Series
NPN Silicon Power Transistors
The BUS50 transistor is designed for low voltage, high–speed,
power switching in inductive circuits where fall time is critical. It is
particularly suited for battery SWITCHMODE applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Fast Turn–Off Times
300 ns Inductive Fall Time –25_C (Typ)
• Operating Temperature Range –65 to +200_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current — Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ — Peak(1)
— Overload
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current — Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{— Peak(1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation — TC = 25°C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ — T_C=100°C
Derate above 25_C
Symbol
V_CEO(sus)
V_CEV
V_EB
I_C
I_CM
I_oI
I_B
I_BM
P_D
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Temperature Range}
T_J, T_stg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
R_θJC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Maximum Lead Temperature}
T_L
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{for Soldering Purposes:}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 1/8″ from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle x10%.
BUS50
125
200
7
70
140
20
350
200
2
–65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Max
Unit
0.5
_C/W
275
_C
BUS50
70 AMPERES
NPN SILICON
POWER TRANSISTOR
125 VOLTS (BVCEO)
350 WATTS
200 V (BVCES)
CASE 197A–05
TO–204AE
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 9
Publication Order Number:
BUS50/D