BUL45D2_14 Datasheet, PDF (1/11 Pages) ON Semiconductor – High Speed, High Gain Bipolar NPN Power Transistor

BUL45D2G
High Speed, High Gain
Bipolar NPN Power
Transistor
with Integrated Collector−Emitter Diode
and Built−in Efficient Antisaturation
Network
The BUL45D2G is state−of−art High Speed High gain BiPolar
transistor (H2BIP). High dynamic characteristics and lot−to−lot
minimum spread (±150 ns on storage time) make it ideally suitable for
light ballast applications. Therefore, there is no need to guarantee an h_FE
window. It’s characteristics make it also suitable for PFC application.
Features
• Low Base Drive Requirement
• High Peak DC Current Gain
• Extremely Low Storage Time Min/Max Guarantees Due to
the H2BIP Structure which Minimizes the Spread
• Integrated Collector−Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic V_CE(sat)
• “6 Sigma” Process Providing Tight and Reproductible
Parameter Spreads
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Sustaining Voltage
V_CEO
400
Vdc
Collector−Base Breakdown Voltage
V_CBO
700
Vdc
Collector−Emitter Breakdown Voltage
V_CES
700
Vdc
Emitter−Base Voltage
V_EBO
12
Vdc
Collector Current − Continuous
I_C
5
Adc
Collector Current − Peak (Note 1)
I_CM
10
Adc
Base Current − Continuous
I_B
2
Adc
Base Current − Peak (Note 1)
I_BM
4
Adc
Total Device Dissipation
@ T_C = 25_C
Derate above 25°C
P_D
75
W
0.6
W/_C
Operating and Storage Temperature
T_J, T_stg −65 to +150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 8
www.onsemi.com
POWER TRANSISTOR
5.0 AMPERES,
700 VOLTS, 75 WATTS
COLLECTOR
2, 4
1
BASE
3
EMITTER
4
TO−220
CASE 221A
STYLE 1
1
23
MARKING DIAGRAM
BUL45D2G
AY WW
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BUL45D2G
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
BUL45D2/D