BUL45D2G Datasheet, PDF (1/11 Pages) ON Semiconductor – High Speed, High Gain Bipolar NPN Power Transistor

BUL45D2G
High Speed, High Gain
Bipolar NPN Power
Transistor
with Integrated Collector−Emitter Diode
and Built−in Efficient Antisaturation
Network
The BUL45D2G is state−of−art High Speed High gain BiPolar
transistor (H2BIP). High dynamic characteristics and lot−to−lot
minimum spread (±150 ns on storage time) make it ideally suitable for
light ballast applications. Therefore, there is no need to guarantee an h_FE
window. It’s characteristics make it also suitable for PFC application.
Features
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ I_C = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to
the H2BIP Structure which Minimizes the Spread
• Integrated Collector−Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic V_CE(sat)
• “6 Sigma” Process Providing Tight and Reproductible
Parameter Spreads
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Total Device Dissipation @ T_C = 25_C
Derate above 25°C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Symbol
V_CEO
V_CBO
V_CES
V_EBO
I_C
I_CM
I_B
I_BM
P_D
T_J, T_stg
Value
400
700
700
12
5
10
2
4
75
0.6
−65 to 150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
_C
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
R_qJC
R_qJA
T_L
1.65
_C/W
62.5
_C/W
260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
April, 2010 − Rev. 5
http://onsemi.com
POWER TRANSISTOR
5.0 AMPERES,
700 VOLTS, 75 WATTS
TO−220AB
CASE 221A−09
STYLE 1
123
MARKING DIAGRAM
BUL45D2G
AY WW
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BUL45D2G
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
BUL45D2/D