BUL42D Datasheet, PDF (1/12 Pages) ON Semiconductor – 4 AMPERES 700 VOLTS 75 WATTS POWER TRANSISTOR

BUL42D
High Speed, High Gain
Bipolar NPN Transistor
Integrating an
Antisaturation Network and
a Transient Voltage
Suppression Capability
The BUL42D is a state–of–the–art bipolar transistor. Tight dynamic
characteristics and lot to lot minimum spread make it ideally suitable
for light ballast applications.
Main Features:
• Free Wheeling Diode Built In
• Flat DC Current Gain
• Fast Switching Times and Tight Distribution
• “Six Sigma” Process Providing Tight and Reproducible Parameter
Spreads
MAXIMUM RATINGS
Rating
Symbol
Value
Collector–Emitter Sustaining Voltage
V_CEO
400
Collector–Base Breakdown Voltage
V_CBO
700
Collector–Emitter Breakdown Voltage
V_CES
700
Emitter–Base Voltage
V_EBO
9
Collector Current – Continuous
– Peak (Note 1)
I_C
4.0
I_CM
8.0
Base Current – Continuous
– Peak (Note 1)
I_B
1.0
I_BM
2.0
*Total Device Dissipation @ T_C = 25_C
P_D
75
*Derate above 25_C
0.6
Operating and Storage Temperature
TYPICAL GAIN
T_J, T_stg –65 to +150
Typical Gain @ I_C = 1 A, V_CE = 2 V
h_FE
13
Typical Gain @ I_C = 0.3 A, V_CE = 1 V
h_FE
16
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Thermal Resistance –
Junction–to–Case
R_θJC
1.66
Thermal Resistance –
Junction–to–Ambient
R_θJA
62.5
Maximum Lead Temperature for Soldering
T_L
260
Purposes: 1/8″ from Case for 5 seconds
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watt
W/_C
_C
–
–
Unit
°C/W
°C/W
°C
http://onsemi.com
4 AMPERES
700 VOLTS
75 WATTS
POWER TRANSISTOR
MARKING
DIAGRAM
TO–220
CASE 221A
STYLE 1
BUL
42D
YWW
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
BUL42D
Package
TO–220
Shipping
50 Units/Rail
© Semiconductor Components Industries, LLC, 2002
1
April, 2002 – Rev. 1
Publication Order Number:
BUL42D/D