BUL146G Datasheet, PDF (1/11 Pages) ON Semiconductor – SWITCHMODE NPN Bipolar Power Transistor

BUL146G, BUL146FG
SWITCHMODEt NPN
Bipolar Power Transistor
For Switching Power Supply Applications
The BUL146G / BUL146FG have an applications specific
state−of−the−art die designed for use in fluorescent electric lamp
ballasts to 130 W and in Switchmode Power supplies for all types of
electronic equipment.
Features
• Improved Efficiency Due to Low Base Drive Requirements:
♦ High and Flat DC Current Gain
♦ Fast Switching
♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)
• Full Characterization at 125°C
• Two Packages Choices: Standard TO−220 or Isolated TO−220
• Parametric Distributions are Tight and Consistent Lot−to−Lot
• BUL146F, Case 221D, is UL Recognized to 3500 V_RMS: File # E69369
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
RMS Isolation Voltage (Note 2)
(for 1 sec, R.H. < 30%, T_C = 25_C)
Total Device Dissipation @ T_C = 25_C
BUL146
BUL146F
Derate above 25°C
BUL146
BUL146F
Symbol
V_CEO
V_CES
V_EBO
I_C
I_CM
I_B
I_BM
V_ISOL1
V_ISOL2
V_ISOL3
P_D
Value
400
700
9.0
6.0
15
4.0
8.0
BUL146F
4500
3500
1500
100
40
0.8
0.32
Unit
Vdc
Vdc
Vdc
Adc
Adc
V
W
W/_C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
T_J, T_stg −65 to 150 _C
Characteristics
Thermal Resistance, Junction−to−Case
BUL146
BUL146F
Symbol
R_qJC
Max
1.25
3.125
Unit
_C/W
Thermal Resistance, Junction−to−Ambient R_qJA
62.5
_C/W
Maximum Lead Temperature for Soldering
T_L
Purposes 1/8″ from Case for 5 Seconds
260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
2. Proper strike and creepage distance must be provided.
http://onsemi.com
POWER TRANSISTOR
8.0 AMPERES
1000 VOLTS
45 and 125 WATTS
MARKING
DIAGRAMS
123
TO−220AB
CASE 221A−09
STYLE 1
BUL146G
AYWW
1
2
3
TO−220 FULLPACK
CASE 221D
STYLE 2
UL RECOGNIZED
BUL146FG
AYWW
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
April, 2010 − Rev. 9
Publication Order Number:
BUL146/D