BU323Z_06 Datasheet, PDF (1/7 Pages) ON Semiconductor – NPN Silicon Power Darlington High Voltage Autoprotected

ON Semiconductort
NPN Silicon Power Darlington
High Voltage Autoprotected
The BU323Z is a planar, monolithic, high−voltage power
Darlington with a built−in active zener clamping circuit. This device is
specifically designed for unclamped, inductive applications such as
Electronic Ignition, Switching Regulators and Motor Control, and
exhibit the following main features:
• Integrated High−Voltage Active Clamp
• Tight Clamping Voltage Window (350 V to 450 V) Guaranteed
Over the −40°C to +125°C Temperature Range
• Clamping Energy Capability 100% Tested in a Live
Ignition Circuit
• High DC Current Gain/Low Saturation Voltages
360 V
CLAMP
Specified Over Full Temperature Range
• Design Guarantees Operation in SOA at All Times
• Offered in Plastic SOT−93/TO−218 Type or
TO−220 Packages
w This device is available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
BU323Z
AUTOPROTECTED
DARLINGTON
10 AMPERES
360 −450 VOLTS CLAMP
150 WATTS
CASE 340D−02
SOT−93/TO−218 TYPE
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous
— Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current — Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{— Peak}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
(T_C = 25_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction Temperature Range}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Maximum Lead Temperature for Soldering Purposes:}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{1/8″ from Case for 5 Seconds}
Symbol
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
P_D
T_J, T_stg
Symbol
R_θJC
T_L
Value
350
6.0
10
20
3.0
6.0
150
1.0
– 65 to + 175
Max
1.0
260
Unit
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
_C
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 12
Publication Order Number:
BU323Z/D