BTA16-600CW3G Datasheet, PDF (1/6 Pages) ON Semiconductor – Triacs Silicon Bidirectional Thyristors

BTA16-600CW3G,
BTA16-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full−wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
• Blocking Voltage to 800 V
• On-State Current Rating of 16 A RMS at 25°C
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dV/dt − 1000 V/ms minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package
• High Commutating dI/dt − 8.5 A/ms minimum at 125°C
• Internally Isolated (2500 V_RMS)
• These are Pb−Free Devices
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1) V_DRM,
V
(T_J = −40 to 125°C, Sine Wave,
V_RRM
50 to 60 Hz, Gate Open)
BTA16−600CW3G
600
BTA16−800CW3G
800
On-State RMS Current
I_T(RMS)
16
A
(Full Cycle Sine Wave, 60 Hz, T_C = 25°C)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T_C = 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
I_TSM
I²t
170
A
120
A²sec
Non−Repetitive Surge Peak Off−State
Voltage (T_J = 25°C, t = 10ms)
V_DSM/ V_DSM/V_RSM
V
V_RSM
+100
Peak Gate Current (T_J = 125°C, t = 20 ms) I_GM
4.0
A
Peak Gate Power
(Pulse Width ≤ 1.0 ms, T_C = 80°C)
P_GM
20
W
Average Gate Power (T_J = 125°C)
P_G(AV)
1.0
W
Operating Junction Temperature Range
T_J −40 to +125 °C
Storage Temperature Range
T_stg −40 to +150 °C
RMS Isolation Voltage
(t = 300 ms, R.H. ≤ 30%, T_A = 25°C)
V_iso
2500
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
TRIACS
16 AMPERES RMS
600 thru 800 VOLTS
MT2
4
MT1
G
MARKING
DIAGRAM
123
x
A
Y
WW
G
TO−220AB
CASE 221A
STYLE 12
BTA16−xCWG
AYWW
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb−Free Package
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
No Connection
ORDERING INFORMATION
Device
Package
BTA16−600CW3G TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
BTA16−800CW3G TO−220AB 50 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2009
1
October, 2009 − Rev. 1
Publication Order Number:
BTA16−600CW3/D