BSV52LT1_06 Datasheet, PDF (1/3 Pages) ON Semiconductor – Switching Transistor NPN Silicon

BSV52LT1
Switching Transistor
NPN Silicon
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Collector Current − Continuous
Symbol
V_CEO
V_CBO
I_C
Value
12
20
100
Unit
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
(Note 1) T_A = 25°C
Derate above 25°C
P_D
225
mW
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) T_A = 25°C
Derate above 25°C
R_qJA
P_D
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction−to−Ambient R_qJA
417
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
B2 M G
G
1
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
B2 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
BSV52LT1
SOT−23 3,000 / Tape & Reel
BSV52LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
Publication Order Number:
BSV52LT1/D