BSV52LT1G Datasheet, PDF (1/3 Pages) ON Semiconductor – Switching Transistor

BSV52LT1G
Switching Transistor
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
Symbol
V_CEO
V_CBO
I_C
Value
12
20
100
Unit
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T_A = 25°C
Derate above 25°C
Symbol
P_D
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) T_A = 25°C
Derate above 25°C
R_qJA
P_D
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction−to−Ambient R_qJA
417
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
B2 M G
G
1
B2 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
BSV52LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 3
Publication Order Number:
BSV52LT1/D