BSS84LT1 Datasheet, PDF (1/4 Pages) ON Semiconductor – Power MOSFET 130 mA, 50 V

BSS84LT1
Power MOSFET
130 mA, 50 V
P−Channel SOT−23
These miniature surface mount MOSFETs reduce power loss
conserve energy, making this device ideal for use in small power
management circuitry. Typical applications are DC−DC converters,
load switching, power management in portable and battery−powered
products such as computers, printers, cellular and cordless telephones.
Features
• Energy Efficient
• Miniature SOT−23 Surface Mount Package Saves Board Space
• Pb−Free Package is Available
http://onsemi.com
130 mA, 50 V R_DS(on) = 10 W
P−Channel
3
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ T_A = 25°C
− Pulsed Drain Current (t_p ≤ 10 ms)
Total Power Dissipation @ T_A = 25°C
Operating and Storage Temperature
Range
V_DSS
50
Vdc
V_GS
± 20
Vdc
mA
I_D
130
I_DM
520
P_D
225
mW
T_J, T_stg − 55 to
°C
150
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
R_qJA
T_L
556 °C/W
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1
2
3
1
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM & PIN ASSIGNMENT
3
Drain
PD = Device Code
M
= Date Code
PDM
1
2
Gate
Source
ORDERING INFORMATION
Device
Package
Shipping^†
BSS84LT1
SOT−23 3000 Tape & Reel
BSS84LT1G
SOT−23 3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
June, 2004 − Rev. 5
Publication Order Number:
BSS84LT1/D