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BSS64LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – Driver Transistor(NPN) | |||
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ON Semiconductort
Driver Transistor
NPN Silicon
BSS64LT1
MAXIMUM RATINGS
Rating
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FRâ5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BSS64LT1 = AM
Symbol
VCEO
VCBO
VEBO
IC
Value
80
120
5.0
100
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
â55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage
(IC = 4.0 mAdc)
CollectorâBase Breakdown Voltage
(IC = 100 mAdc)
EmitterâBase Breakdown Voltage
(IE = 100 mAdc)
Collector Cutoff Current
(VCE = 90 Vdc)
(TA = 150°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc)
1. FRâ5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
3
1
2
CASE 318â08, STYLE 6
SOTâ23 (TOâ236AB)
COLLECTOR
3
1
BASE
2
EMITTER
Min
Max
Unit
Vdc
80
â
Vdc
120
â
Vdc
5.0
â
µAdc
â
0.1
â
500
nAdc
â
200
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 â Rev. 3
Publication Order Number:
BSS64LT1/D
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