BSS63LT1G_16 Datasheet, PDF (1/5 Pages) ON Semiconductor – High Voltage Transistor

BSS63LT1G,
NSVBSS63LT1G
High Voltage Transistor
PNP Silicon
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Emitter Voltage
R_BE = 10 kW
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CER
I_C
−100
−110
−100
Vdc
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
P_D
(Note 1) T_A = 25°C
Derate above 25°C
mW
225
1.8
mW/°C
Thermal Resistance Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
T_A = 25°C
Derate above 25°C
R_qJA
P_D
556
°C/W
mW
300
mW/°C
2.4
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R_qJA
T_J, T_stg
417
−55 to
+150
°C/W
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
BM M G
G
BM = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
BSS63LT1G
NSVBSS63LT1G
SOT−23
(Pb−free)
SOT−23
(Pb−free)
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
1
October, 2016 − Rev. 8
Publication Order Number:
BSS63LT1/D