BSS63LT1G Datasheet, PDF (1/3 Pages) ON Semiconductor – High Voltage Transistor

BSS63LT1G
High Voltage Transistor
PNP Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Emitter Voltage
R_BE = 10 kW
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CER
I_C
−100
−110
−100
Vdc
Vdc
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
P_D
(Note 1) T_A = 25°C
Derate above 25°C
mW
225
1.8
mW/°C
Thermal Resistance Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
T_A = 25°C
Derate above 25°C
R_qJA
P_D
556
°C/W
mW
300
mW/°C
2.4
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R_qJA
T_J, T_stg
417
−55 to
+150
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
BM M G
G
BM = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
BSS63LT1G
SOT−23 3000/Tape & Reel
(Pb−free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 − Rev. 5
Publication Order Number:
BSS63LT1/D