BSS63LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – High Voltage Transistor(PNP)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by BSS63LT1/D
High Voltage Transistor
PNP Silicon
COLLECTOR
3
BSS63LT1
1
BASE
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Emitter Voltage
RBE = 10 kΩ
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BSS63LT1 = T1
Symbol
VCEO
VCER
IC
Value
–100
–110
–100
2
EMITTER
Unit
Vdc
Vdc
mAdc
Symbol
PD
R_qJA
PD
R_qJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –100 µAdc)
Collector – Emitter Breakdown Voltage
(IC = –10 µAdc, IE = 0, RBE = 10 kΩ)
Collector – Base Breakdown Voltage
(IE = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc)
Collector Cutoff Current
(VCB = –90 Vdc, IE = 0)
Collector Cutoff Current
(VCE = –110 Vdc, RBE = 10 kΩ)
Emitter Cutoff Current
(VEB = –6.0 Vdc, IC = 0)
  1. FR– 5 = 1.0 0.75 0.062 in.
  2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Symbol
V(BR)CEO
V(BR)CER
V(BR)CBO
V(BR)EBO
ICBO
ICER
IEBO
Min
–100
–110
–110
–6.0
—
—
—
REV 1
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Typ
Max
Unit
Vdc
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
—
nAdc
—
–100
µAdc
—
–10
nAdc
—
–200
1