BSS123LT1G Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET 170 mAmps, 100 Volts

BSS123LT1G,
BVSS123LT1G
Power MOSFET
170 mAmps, 100 Volts
N−Channel SOT−23
Features
• BVSS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain−Source Voltage
V_DSS
100
Vdc
Gate−Source Voltage
− Continuous
− Non−repetitive (t_p ≤ 50 ms)
V_GS
± 20
Vdc
V_GSM
± 40
Vpk
Drain Current
− Continuous (Note 1)
− Pulsed (Note 2)
Adc
I_D
0.17
I_DM
0.68
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
(Note 3) T_A = 25°C
Derate above 25°C
P_D
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
556
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width v 300 ms, Duty Cycle v 2.0%.
3. FR−5 = 1.0  0.75  0.062 in.
http://onsemi.com
170 mAMPS
100 VOLTS
R_DS(on) = 6 W
N−Channel
3
1
2
MARKING DIAGRAM
& PIN ASSIGNMENT
3
Drain
3
1
2
SOT−23
CASE 318
STYLE 21
SA MG
G
1
2
Gate
Source
SA = Device Code
M = Date Code
G = Pb−Free Package
(*Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
November, 2013 − Rev. 9
Publication Order Number:
BSS123LT1/D