BSS123LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – TMOS FET Transistor(N-Channel)

BSS123LT1
Preferred Device
Power MOSFET
170 mAmps, 100 Volts
N−Channel SOT−23
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain−Source Voltage
V_DSS
100
Vdc
Gate−Source Voltage
− Continuous
− Non−repetitive (t_p ≤ 50 ms)
V_GS
± 20
Vdc
V_GSM
± 40
Vpk
Drain Current
− Continuous (Note 1)
− Pulsed (Note 2)
Adc
I_D
0.17
I_DM
0.68
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
(Note 3) T_A = 25°C
Derate above 25°C
P_D
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
556
°C/W
Junction and Storage Temperature
T_J, T_stg −55 to +150 °C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width v 300 ms, Duty Cycle v 2.0%.
3. FR−5 = 1.0  0.75  0.062 in.
http://onsemi.com
170 mAMPS
100 VOLTS
R_DS(on) = 6 W
N−Channel
3
1
2
MARKING
DIAGRAM
3
SOT−23
CASE 318
SA
1
STYLE 21
2
SA
= Device Code
M
= Date Code
PIN ASSIGNMENT
Drain
3
1
2
Gate
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
1
March, 2005 − Rev. 5
Publication Order Number:
BSS123LT1/D