BSP19AT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – SOT.223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
Epitaxial Transistor
This family of NPN Silicon Epitaxial transistors is designed for use as a general
purpose amplifier and in switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount applications.
• High Voltage: V(BR)CEO of 250 and 350 Volts.
• The SOT-223 package can be soldered using wave or reflow.
• SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering, eliminating the possibility of
damage to the die
• Available in 12 mm Tape and Reel
T1 Configuration – 7 inch/1000 unit reel
T3 Configuration – 13 inch/4000 unit reel
• PNP Complement is BSP16T1
COLLECTOR 2,4
BASE
1
EMITTER 3
Order this document
by BSP19AT1/D
BSP19AT1
Motorola Preferred Device
SOT–223 PACKAGE
NPN SILICON
HIGH VOLTAGE
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Collector-Emitter Voltage (Open Base)
Collector-Base Voltage (Open Emitter)
Emitter-Base Voltage (Open Collector)
Collector Current (DC)
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
Storage Temperature Range
Tstg
Junction Temperature
TJ
DEVICE MARKING
SP19A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance from Junction-to-Ambient
Maximum Temperature for Soldering Purposes
Time in Solder Bath
R_θJA
TL
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.
Value
350
400
5.0
1000
0.8
6.4
– 65 to 150
150
Max
156
260
10
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
°C
Unit
°C/W
°C
Sec
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
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