BSP16T3 Datasheet, PDF (1/3 Pages) ON Semiconductor – High Voltage Transistors

BSP16T1G
High Voltage Transistors
PNP Silicon
Features
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation @ T_A = 25C
(Note 1)
V_CEO
V_CBO
V_EBO
I_C
P_D
--300
--350
--6.0
--100
1.5
Vdc
Vdc
Vdc
mAdc
W
Storage Temperature Range
P_D
--65 to
C
+150
Junction Temperature
T_J
150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction--to--Ambient
R_θJA
83.3
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in x 1.575 in x
0.059 in; mounting pad for the collector lead min. 0.93 sq. in.
http://onsemi.com
PNP SILICON
HIGH VOLTAGE TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
MARKING
DIAGRAM
TO--223
CASE 318E
STYLE 1 ₁
AYW
BT2G
G
A
= Assembly Location
Y
= Year
W = Work Week
BT2 =Device Code
G
= Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
BSP16T1G
TO--223 1000/Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
1
September, 2010 -- Rev. 7
Publication Order Number:
BSP16T1/D