BS170 Datasheet, PDF (1/4 Pages) Motorola, Inc – TMOS FET Switching(N-Channel-Enhancement)

BS170
Preferred Device
Small Signal MOSFET
500 mA, 60 V
N−Channel TO−92 (TO−226)
Features
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain −Source Voltage
Gate−Source Voltage
− Continuous
− Non−repetitive (t_p ≤ 50 ms)
V_DS
60
Vdc
V_GS
± 20
Vdc
V_GSM
± 40
Vpk
Drain Current (Note)
Total Device Dissipation @ T_A = 25°C
Operating and Storage Junction
Temperature Range
I_D
0.5
Adc
P_D
350
mW
T_J, T_stg − 55 to
°C
+150
1. The Power Dissipation of the package may result in a lower continuous drain
current.
http://onsemi.com
500 mA, 60 V
R_DS(on) = 5 W
N−Channel
D
G
S
TO−92 (TO−226)
CASE 29
STYLE 30
123
MARKING DIAGRAM
& PIN ASSIGNMENT
BS170
YWW
© Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 4
1
Drain
3
Source
2
Gate
Y
= Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
BS170/D