BS108_11 Datasheet, PDF (1/3 Pages) ON Semiconductor – Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level

BS108
Small Signal MOSFET
250 mAmps, 200 Volts,
Logic Level
N−Channel TO−92
This MOSFET is designed for high voltage, high speed switching
applications such as line drivers, relay drivers, CMOS logic,
microprocessor or TTL to high voltage interface and high voltage
display drivers.
Features
• Low Drive Requirement, V_GS = 3.0 V max
• Inherent Current Sharing Capability Permits Easy Paralleling of
many Devices
• AEC Qualified
• PPAP Capable
• This is a Pb−Free Device*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain −Source Voltage
V_DSS
200
Vdc
Gate−Source Voltage
V_GS
±20
Vdc
Drain Current
Continuous (Note 1)
Pulsed (Note 2)
mAdc
I_D
250
I_DM
500
Total Power Dissipation
@ T_A = 25°C
Derate above T_A = 25°C
P_D
350
mW
6.4
mW/°C
Operating and Storage Temperature Range T_J, T_stg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
http://onsemi.com
250 mAMPS
200 VOLTS
R_DS(on) = 8 W
N−Channel
D
G
S
1
2
3
MARKING
DIAGRAM
TO−92
CASE 29−11
STYLE 30
A
BS108
YWW G
G
BS108 = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
BS108ZL1G
TO−92
(Pb−Free)
2000/Ammo Pack
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
1
April, 2011 − Rev. 4
Publication Order Number:
BS108/D