BS107_04 Datasheet, PDF (1/6 Pages) ON Semiconductor – Small Signal MOSFET 250 mAmps, 200 Volts

BS107, BS107A
Preferred Device
Small Signal MOSFET
250 mAmps, 200 Volts
N−Channel TO−92
Features
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain −Source Voltage
Gate−Source Voltage
− Continuous
− Non−repetitive (t_p ≤ 50 ms)
Drain Current
Continuous (Note 1)
Pulsed (Note 2)
Total Device Dissipation @ T_A = 25°C
Derate above 25°C
V_DS
V_GS
V_GSM
I_D
I_DM
P_D
200
Vdc
± 20
Vdc
± 30
Vpk
mAdc
250
500
350
mW
Operating and Storage Junction
Temperature Range
T_J, T_stg − 55 to
°C
150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
http://onsemi.com
250 mA, 200 V
R_DS(on) = 14 W (BS107)
R_DS(on) = 6.4 W (BS107A)
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
TO−92
CASE 29
STYLE 30
BS
107
YWW
1
23
BS107 = Specific Device Code
Y
= Year
WW = Work Week
1
3
Drain 2 Source
Gate
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2004
1
December, 2004 − Rev. 4
Publication Order Number:
BS107/D