BS107A Datasheet, PDF (1/4 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor

BS107A
Small Signal MOSFET
250 mAmps, 200 Volts
N−Channel TO−92
Features
• AEC Qualified
• PPAP Capable
• This is a Pb−Free Device*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain −Source Voltage
Gate−Source Voltage
− Continuous
− Non−repetitive (t_p ≤ 50 ms)
Drain Current
Continuous (Note 1)
Pulsed (Note 2)
Total Device Dissipation @ T_A = 25°C
Derate above 25°C
V_DS
V_GS
V_GSM
I_D
I_DM
P_D
200
Vdc
± 20
Vdc
± 30
Vpk
mAdc
250
500
350
mW
Operating and Storage Junction
Temperature Range
T_J, T_stg − 55 to
°C
150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
http://onsemi.com
250 mAMPS, 200 VOLTS
R_DS(on) = 6.4 W
D
N−Channel
G
S
MARKING
DIAGRAM
1
2
3
TO−92
CASE 29−11
STYLE 30
A
BS107A
YWW G
G
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
BS107ARL1G
TO−92 2000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
1
April, 2011 − Rev. 6
Publication Order Number:
BS107/D