BMS4007 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1820
BMS4007
N-Channel Power MOSFET
75V, 60A, 7.8mΩ, TO-220ML(LS)
http://onsemi.com
Features
• _{ON-resistance RDS(on)=6mΩ (typ.)}
• _{Input capacitance Ciss=9700pF (typ.)}
• _{10V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=48V, L=100μH, IAV=48A (Fig.1)
*2 L≤100μH, Single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
75
V
±20
V
60
A
240
A
2.0
W
30
W
150
°C
--55 to +150
°C
299 mJ
48
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7525-002
10.0
3.2
4.5
2.8
Product & Package Information
• Package
: TO-220ML(LS)
• JEITA, JEDEC
: SC-67, SOT-186A
• Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine
Marking
Electrical Connection
2
1.6
1.2
0.75
123
2.55
2.55
0.7
1 : Gate
2 : Drain
3 : Source
TO-220ML(LS)
MS4007
LOT No.
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
82510QA TK IM TC-00002454 No. A1820-1/5