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BMS3004 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications
Ordering number : ENA1908B
BMS3004
P-Channel Power MOSFET
–75V, –68A, 8.5mΩ, TO-220F-3SG
http://onsemi.com
Features
• ON-resistance RDS(on)1=6.5mΩ (typ.)
• Input capacitance Ciss=13400pF (typ.)
• 4V drive
TO-220F-3SG
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--48V, L=100μH, IAV=--54A (Fig.1)
*2 L≤100μH, Single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
--75
V
±20
V
--68
A
--272
A
2.0
W
40
W
150
°C
--55 to +150
°C
380 mJ
--54
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
ID=--1mA, VGS=0V
VDS=--75V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--34A
ID=--34A, VGS=--10V
ID=--34A, VGS=--4V
VDS=--20V, f=1MHz
See Fig.2
VDS=--48V, VGS=--10V, ID=--68A
IS=--68A, VGS=0V
See Fig.3
IS=--68A, VGS=0V, di/dt=--100A/μs
Ratings
Unit
min
typ
max
--75
V
--10
μA
±10
μA
--1.2
--2.6
V
120
S
6.5
8.5 mΩ
8.3
11.4 mΩ
13400
pF
1000
pF
740
pF
70
ns
245
ns
1400
ns
650
ns
300
nC
30
nC
70
nC
--0.9
--1.5
V
146
ns
470
nC
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2013
November, 2013
N0613 TKIM/41112QA TKIM TC-00002740/10511QA TKIM TC-00002547 No. A1908-1/5