BMS3003 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1907B
BMS3003
P-Channel Power MOSFET
–60V, –78A, _{6.5mΩ, TO-220F-3SG}
http://onsemi.com
Features
• _{ON-resistance RDS(on)1=5.0mΩ (typ.)}
• _{Input capacitance Ciss=13200pF (typ.)}
• _{-4V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--36V, L=100μH, IAV=--60A (Fig.1)
*2 L≤100μH, Single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
Unit
--60
V
±20
V
--78
A
--312
A
2.0
W
40
W
150
°C
--55 to +150
°C
420 mJ
--60
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ.)
7529-001
10.16
3.18
4.7
2.54
BMS3003-1E
Product & Package Information
• Package
: TO-220F-3SG
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./tube
Marking
Electrical Connection
2
A
1.47 MAX
0.8
123
2.54
2.54
2.76
DETAIL-A
(0.84)
0.5
1 : Gate
FRAME _{2 : Drain}
EMC
3 : Source
TO-220F-3SG
MS3003
1
LOT No.
3
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
April, 2014
40714 TKIM/91212 TKIM TC-00002812/D2210QA TKIM TC-00002546 No.A1907-1/5