BF721T1G Datasheet, PDF (1/4 Pages) ON Semiconductor – PNP Silicon Transistor

BF721T1G
PNP Silicon Transistor
Features
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector -- Emitter Voltage
Collector -- Base Voltage
Collector -- Emitter Voltage
Emitter -- Base Voltage
Collector Current
Total Power Dissipation up to T_A = 25C
(Note 1)
V_CEO
V_CBO
V_CER
V_EBO
I_C
P_D
--300
--300
--300
--5.0
--50
1.5
Vdc
Vdc
Vdc
Vdc
mAdc
W
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
T_stg --65 to +150 C
T_J
150
C
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction--to--Ambient (Note 1)
R_θJA
83.3
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 in².
http://onsemi.com
PNP SILICON TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
MARKING
DIAGRAM
1
SOT--223 (TO--261)
CASE 318E
STYLE 1
AYW
DF G
G
1
A = Assembly Location
Y = Year
W = Work Week
DF = Device Code
G = Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
BF721T1G
SOT--223
(Pb--Free)
1000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
1
September, 2010 -- Rev. 9
Publication Order Number:
BF721T1/D