BF721T1 Datasheet, PDF (1/6 Pages) Motorola, Inc – PNP SILICON TRANSISTOR SURFACE MOUNT

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BF721T1/D
PNP Silicon Transistor
COLLECTOR 2,4
BF721T1
Motorola Preferred Device
BASE
1
PNP SILICON
TRANSISTOR
SURFACE MOUNT
EMITTER 3
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation up to
TA = 25°C(1)
Storage Temperature Range
Junction Temperature
DEVICE MARKING
DF
Symbol
VCEO
VCBO
VCER
VEBO
IC
PD
Tstg
TJ
Value
– 300
–300
– 300
– 5.0
–100
1.5
– 65 to +150
150
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
Watts
°C
°C
4
1
2
3
CASE 318E-04, STYLE 1
SOT–223 (TO-261AA)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance from Junction to
R_θJA
83.3
Ambient(1)
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
– 300
—
Vdc
Collector-Base Breakdown Voltage
(IC = –100 µAdc, IE = 0)
V(BR)CBO
–300
—
Vdc
Collector-Emitter Breakdown Voltage
(IC = –100 µAdc, RBE = 2.7 kΩ)
V(BR)CER
–300
—
Vdc
Emitter-Base Breakdown Voltage
(IE = –10 µAdc, IC = 0)
V(BR)EBO
– 5.0
—
Vdc
Collector-Base Cutoff Current
(VCB = – 200 Vdc, IE = 0)
ICBO
—
–10
nAdc
Collector–Emitter Cutoff Current
(VCE = – 250 Vdc, RBE = 2.7 kΩ)
(VCE = – 200 Vdc, RBE = 2.7 kΩ, TJ = 150°C)
ICER
—
–50
nAdc
—
–10
µAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
©MMoottoorroollaa, ISncm. 1a9l9l–8Signal Transistors, FETs and Diodes Device Data
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