BF720T1G Datasheet, PDF (1/4 Pages) ON Semiconductor – NPN Silicon Transistor

BF720T1G, BF720T3G
NPN Silicon Transistor
Features
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector -- Emitter Voltage
Collector -- Base Voltage
Collector -- Emitter Voltage
Emitter -- Base Voltage
Collector Current
Total Power Dissipation up to T_A = 25C
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_CER
V_EBO
I_C
P_D
T_stg
T_J
300
Vdc
300
Vdc
300
Vdc
5.0
Vdc
100
mAdc
1.5
W
--65 to +150 C
150
C
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction--to--Ambient (Note 1)
R_θJA
83.3
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x
0.059 in.; mounting pad for the collector lead min. 0.93 in².
http://onsemi.com
NPN SILICON TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
1
SOT--223 (TO--261)
CASE 318E
STYLE 1
MARKING
DIAGRAM
AYW
DC G
G
1
A = Assembly Location
Y = Year
W = Work Week
DC = Device Code
G = Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
BF720T1G
SOT--223 1000 / Tape & Reel
(Pb--Free)
BF720T3G
SOT--223 4000 / Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
1
September, 2010 -- Rev. 7
Publication Order Number:
BF720T1/D