BF720T1 Datasheet, PDF (1/6 Pages) Motorola, Inc – NPN Ssilicon Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BF720T1/D
NPN Silicon Transistor
COLLECTOR 2,4
BF720T1
Motorola Preferred Device
BASE
1
EMITTER 3
NPN SILICON
TRANSISTOR
SURFACE MOUNT
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation up to TA = 25°C
Storage Temperature Range
Junction Temperature
DEVICE MARKING
DC
Symbol
VCEO
VCBO
VCER
VEBO
IC
PD
Tstg
TJ
Value
300
300
300
5.0
100
1.5
– 65 to +150
150
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
Watts
°C
°C
4
1
2
3
CASE 318E-04, STYLE 1
SOT–223 (TO-261AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
from Junction-to-Ambient(1)
Symbol
Max
R_θJA
83.3
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
—
Vdc
Collector-Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
V(BR)CBO
300
—
Vdc
Collector-Emitter Breakdown Voltage
(IC = 100 µAdc, RBE = 2.7 kΩ)
V(BR)CER
300
—
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector-Base Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
—
10
nAdc
Collector–Emitter Cutoff Current
(VCE = 250 Vdc, RBE = 2.7 kΩ)
(VCE = 200 Vdc, RBE = 2.7 kΩ, TJ = 150°C)
ICER
—
50
nAdc
—
10
µAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
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