BF422_10 Datasheet, PDF (1/4 Pages) ON Semiconductor – High Voltage Transistors

BF422
High Voltage Transistors
NPN Silicon
Features
• This is a Pb−Free Device*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Total Device Dissipation (Note 1)
@ T_A = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_CM
P_D
T_J, T_stg
Value
250
250
5.0
50
100
830
6.6
−55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mA
mW
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Symbol
R_qJA
Max
150
Unit
°C/W
Thermal Resistance,
Junction−to−Lead
R_qJL
°C/W
68
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on a FR4 board with 200 mm² of 1 oz copper and lead length of
5 mm.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
September, 2010 − Rev. 1
http://onsemi.com
COLLECTOR
2
3
BASE
1
EMITTER
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
TO−92
(TO−226AA)
CASE 29−11
STYLE 14
MARKING DIAGRAM
BF422
AYWW G
G
BF422 = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BF422G
Package
TO−92
(Pb−Free)
Shipping^†
5000 Units/Box
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BF422/D