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BF421 Datasheet, PDF (1/4 Pages) Motorola, Inc – High Voltage Transistors(PNP) | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BF421/D
High Voltage Transistors
PNP Silicon
COLLECTOR
2
BF421
BF423
3
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
BF421
BF423
Collector â Emitter Voltage
Collector â Base Voltage
Emitter â Base Voltage
Collector Current â Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
â300
â250
â300
â250
â5.0
â500
625
5.0
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5
12
Operating and Storage Junction
Temperature Range
TJ, Tstg
â 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector â Emitter Breakdown Voltage (1)
(IC = â1.0 mAdc, IB = 0)
BF421
BF423
Collector â Base Breakdown Voltage
(IC = â100 mAdc, IE = 0)
BF421
BF423
Emitter â Base Breakdown Voltage
(IE = â100 mAdc, IC = 0)
BF421
BF423
Collector Cutoff Current
(VCB = â200 Vdc, IE = 0)
BF421
BF423
Emitter Cutoff Current
(VEB = â5.0 Vdc, IC = 0)
v v 1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
BF421
BF423
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
1
2
3
CASE 29â11, STYLE 14
TOâ92 (TOâ226AA)
Min
Max
Unit
â300
â250
â300
â250
â5.0
â5.0
â
â
â
â
â
â
â
â
â
â
â0.01
â
â100
â
Vdc
Vdc
Vdc
mAdc
nAdc
REV 1
©MMotootorroollaa,
SmallâSignal
Inc. 1998
Transistors,
FETs
and
Diodes
Device
Data
1
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