BDV65B_12 Datasheet, PDF (1/7 Pages) ON Semiconductor – Complementary Silicon Plastic Power Darlingtons

BDV65B (NPN),
BDV64B (PNP)
Complementary Silicon
Plastic Power Darlingtons
. . . for use as output devices in complementary general purpose
amplifier applications.
Features
• High DC Current Gain − HFE = 1000 (min) @ 5 Adc
• Monolithic Construction with Built−in Base Emitter Shunt Resistors
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak
Base Current
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Operating and Storage Junction Temperature
Range
Symbol
V_CEO
V_CB
V_EB
I_C
I_B
P_D
T_J, T_stg
Max
100
100
5.0
10
20
0.5
125
1.0
-65 to
+ 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Case
R_qJC
1.0 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
10 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80−100−120 VOLTS,
125 WATTS
NPN
COLLECTOR 2
PNP
COLLECTOR 2,4
BASE
1
BASE
1
EMITTER 3
BDV65B
EMITTER 3
BDV64B
1
2
3
SOT−93
(TO−218)
CASE 340D
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
May, 2012 − Rev. 14
Publication Order Number:
BDV65B/D